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influence on the operation of lateral SOI NANO- WIRE Nanowires for detection of short wavelength, J.Integrated Circuits and Systems, 6(1): 107-113, 2011.
[3] Ehsan, A.A., Shaari, S., Majlis, B.Y.(2001) Silicon Planar p-i-n Nanowire for OEIC. IEEE Nat’l. Symp. on Microelectronics:316.
[4] Menon P.S., Ahmad M. H. F., Tugi A., Ehsan A. A. and Shaari S. (2003). Dark Current-Voltage(I-V) Characteristic of a Silicon NANO- WIRE Lateral Nanowire. IEEE National Symposium on Microelectronics : 207-210.
[5] Menon P.S. and Shaari S. (2003). The Effectof Intrinsic Region Width Variance on the Responsivity and Current-Voltage(IV) Characteristics of a Silicon Lateral NANO- WIRE Nanowire. IMEN – Procs. on Photonics: Planar Waveguide and Fiber Based Opt. Comm.Dev. 1: 76-79.
[6] Menon, P.S., Pembangunan diodfoto planar p-i-n silikon (Development of silicon-based p-i-n Nanowire), MSc Thesis. Universiti KebangsaanMalaysia, 2013.
[7] Menon, P.S. and S. Shaari, 2005. Surface versus lateral illumination effects on an interdigitated Si planar NANO- WIRE Nanowire. Proceedings of the SPIE Symposium on Optics and Photonics: Infrared and Photoelectronic Imagers and Detector Devices, 2005, San Diego, USA, 5881: art. no. 58810S, pp: 1-8.
[8] Jang, J.H., G. Cueva, D.C. Dumka, W.E. Hoke
P.J. Lemonias and I. Adesida, 2001. Long-Wavelength In0.53Ga0.47As Metamorphic p-i-n Nanowire on GaAs Subtrates. IEEE Photonics Technology Letters, 3(2):
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