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A Study on Optical Parameters of Ge-Se-Te Thin Film for Optical Storage Devices

Manuj Kumar Agarwal1 , Manish Saxena2 , Shilpa Gupta3

Section:Research Paper, Product Type: Journal Paper
Volume-6 , Issue-12 , Page no. 943-947, Dec-2018

CrossRef-DOI:   https://doi.org/10.26438/ijcse/v6i12.943947

Online published on Dec 31, 2018

Copyright © Manuj Kumar Agarwal, Manish Saxena, Shilpa Gupta . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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IEEE Style Citation: Manuj Kumar Agarwal, Manish Saxena, Shilpa Gupta, “A Study on Optical Parameters of Ge-Se-Te Thin Film for Optical Storage Devices,” International Journal of Computer Sciences and Engineering, Vol.6, Issue.12, pp.943-947, 2018.

MLA Style Citation: Manuj Kumar Agarwal, Manish Saxena, Shilpa Gupta "A Study on Optical Parameters of Ge-Se-Te Thin Film for Optical Storage Devices." International Journal of Computer Sciences and Engineering 6.12 (2018): 943-947.

APA Style Citation: Manuj Kumar Agarwal, Manish Saxena, Shilpa Gupta, (2018). A Study on Optical Parameters of Ge-Se-Te Thin Film for Optical Storage Devices. International Journal of Computer Sciences and Engineering, 6(12), 943-947.

BibTex Style Citation:
@article{Agarwal_2018,
author = {Manuj Kumar Agarwal, Manish Saxena, Shilpa Gupta},
title = {A Study on Optical Parameters of Ge-Se-Te Thin Film for Optical Storage Devices},
journal = {International Journal of Computer Sciences and Engineering},
issue_date = {12 2018},
volume = {6},
Issue = {12},
month = {12},
year = {2018},
issn = {2347-2693},
pages = {943-947},
url = {https://www.ijcseonline.org/full_paper_view.php?paper_id=3444},
doi = {https://doi.org/10.26438/ijcse/v6i12.943947}
publisher = {IJCSE, Indore, INDIA},
}

RIS Style Citation:
TY - JOUR
DO = {https://doi.org/10.26438/ijcse/v6i12.943947}
UR - https://www.ijcseonline.org/full_paper_view.php?paper_id=3444
TI - A Study on Optical Parameters of Ge-Se-Te Thin Film for Optical Storage Devices
T2 - International Journal of Computer Sciences and Engineering
AU - Manuj Kumar Agarwal, Manish Saxena, Shilpa Gupta
PY - 2018
DA - 2018/12/31
PB - IJCSE, Indore, INDIA
SP - 943-947
IS - 12
VL - 6
SN - 2347-2693
ER -

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Abstract

The chalcogenide glasses have recently been investigated intensively because of their promising technological applications in reversible phase change optical recording. Recently, there is a trend of using amorphous materials, rather than carefully prepared crystalline semiconductors, in much needed investigation of such chalcogenide based materials. The present study examines the impact of germanium (Ge) content variation on the optical properties of GexSe50Te50-x (x = 10, 20, 30, 40 at %) based thin films. The optical absorption estimations were performed at room temperature with the change in wavelength. Numerous optical constants were also studied for the concentrated thin films using the optical absorption information in transmission spectra. It was observed that the optical absorption mechanism follow the rule of the allowed direct transition. The theoretical band gap was found to decrease as the Ge content (%) increases from 10 to 40 at %. This outcome was clarified regarding the compound bond approach and hence shows usefulness for optical recording devices.

Key-Words / Index Term

Absorption coefficient, extinction coefficient, theoretical energy band gap, refractive index

References

[1]. T. Phatak, S.D. Sawarkar, “Detection of Faulty Sensor Node within Wireless Sensor Network for improving Network Performance”, Int. J. Sc. Res. in Network Security and Communication, Vol. 5, Issue 3, pp. 117 – 122, 2017.
[2]. R. V. Dharmadhikari, S. S. Turambekar, S. C. Dolli, P K Akulwar, “Cloud Computing: Data Storage Protocols and Security Techniques”, International Journal of Scientific Research in Computer Science and Engineering Vol.6, Issue.2, pp.113-118, 2018.
[3]. M. Ilyas, M. Zulfequar, M. Husain, “Optical properties of a-(Se70Te30)100-x(Se98 Bi2)x Thin Films”, Optical Materials, Vol. 13, Issue 4, pp. 397-404, 2000.
[4]. J. C. Phillips, M. F. Thorpe, “Constraint Theory, Vector Percolation and Glass Formation”, Solid State Comm., Vol. 53, Issue 8, pp. 699-702, 1985.
[5]. M. Saxena and S. Gupta, “Effect of Compositional Dependence on Physical Properties of Ge16Se84-xBix Glass System for Phase Change Optical Recording”, MIT Int. J. Electronics & Communication Engg., Vol. 2, Issue 2, pp. 63, 2012.
[6]. K. M. Al Mokhtar and B.O. Alsobhi, “Structural, Morphology and Some Optical Properties of Chalcogenide Ga80−xSexTe20 (Where x = 10%, 15% and 20%) Glassy Material,” New Journal of Glass and Ceramics, Vol. 7, pp. 91-99, 2017.
[7]. M. Saxena, and S. Gupta, “A Comparison on Physical Properties of Ge–Se–Bi Based Chalcogenide Glasses,” Material Focus, Vol. 6, Issue 4, pp. 474–479, 2017.
[8]. S. Tiwari, A.K. Saxena, D. Saxena, “Optical characterization of Ge0.15Se0.85-xAgx (00.20) Glasses”, Advances in Appl. Sci. Research, Vol. 2, Issue 5, pp. 77-83, 2011.
[9]. P. Nermec, M. Frumar ,J. Jedelsky , M. Jelinek, J. Lancok, I. Gregora, “Optical Properties of As36Te42Ge10Si12 Thin Films”, J. Non-Cryst.Solids, Vol.1013, pp. 299–302, 2002.
[10].M. S. Kamboj, G. Kaur, R. Thangaraj “Dark and photoconductivity of amorphous Se–Te–Pb thin films”, Thin Solid Films, Vol. 420, pp. 350 – 353,2002.
[11].J.A. Savage, “Infrared Optical Materials and their Antireflection Coatings”, Adam Hilger, Bristol, 1985.
[12].K. A. Aly, “Optical properties of Ge–Se–Te wedge-shaped films by using only transmission spectra”, J.Non-Cryst.Solids, Vol. 355, pp. 1489-1495, 2009.
[13].A. El-korashy, Bakry A, M.A. Abdel-Rahim and M. Abdel-Sattar, “Annealing effects on some physical properties of Ge5Se25Te70 chalcogenide glasses”, Physica B, Vol. 391, pp. 266-273, 2007.
[14].M. K. Agarwal, M. Saxena and N. Rastogi, “Study Of Influence Of Ge Content On Physical Parameter Of Ge-Se-Te System”, Vol. 8, Issue, 10, pp. 20914-20917,2017,
[15].M. Kubliha, P. Kostka, V. Trnovcová, J. Zavadil, J. Bednarcik, V. Labaš , J. Pedlíková, A. Ch-Dippel, H.-P. Liermann and J. Psota, “Lanthanides in Non-oxide Glasses”, J. Alloys Compd. Vol. 586, pp. 308-313, 2014.
[16].J. Collway, Book on “The theory of energy bands Structure,” Moscow Mir, 1969.
[17].M. Naser Ahmed , Zaliman Sauli, Uda Hashim and Yarub Al-Douri, “Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method”, Int. J. Nanoelectronics and Materials, Vol. 2, pp. 189-195, 2009.
[18].A. Shamshad Khan, M. Zulfquar and M. Husain, “Effects of annealing on crystallization process in amorphous Ge5Se95− xTex thin films”, Physica B, Vol. 324, Issue 1-4, pp. 336-343, 2002.
[19].K. Morigaki, “Physics of Amorphous emiconductors”,World Scientific, Singapore, 1999.
[20].S. R. Elliott, “The Physics and Chemistry of Solids”, Wiley, Chichester, 2000.
[21].M. Kastner, “Bonding Bands, Lone-Pair Bands, and Impurity States in Chalcogenide Semiconductors,” Physics Review Lett., Vol. 28, Issue 6, pp. 355-357, 1972.
[22].M. Kastner, “Compositional Trends in the Optical Properties of Amorphous Lone-Pair Semiconductors”, Physics: Review B, Vol. 7, Issue 12, pp. 5237-5252, 1973.